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NTMSD3P303R2
SCHOTTKY MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Thermal Resistance ? Junction ? to ? Ambient (Note 5)
Thermal Resistance ? Junction ? to ? Ambient (Note 6)
Thermal Resistance ? Junction ? to ? Ambient (Note 7)
Average Forward Current (Note 7)
(Rated V R , T A = 100 ° C)
Peak Repetitive Forward Current (Note 7)
(Rated V R , Square Wave, 20 kHz, T A = 105 ° C)
Non ? Repetitive Peak Surge Current (Note 7)
(Surge Applied at Rated Load Conditions, Half ? Wave, Single Phase, 60 Hz)
Symbol
V RRM
V R
R q JA
R q JA
R q JA
I O
I FRM
I FSM
Value
30
197
97
62.5
3.0
6.0
30
Unit
V
° C/W
° C/W
° C/W
A
A
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
5. Minimum FR ? 4 or G ? 10 PCB, Steady State.
6. Mounted onto a 2 ″ square FR ? 4 Board (1 in sq, 2 oz Cu 0.06 ″ thick single sided), Steady State.
7. Mounted onto a 2 ″ square FR ? 4 Board (1 in sq, 2 oz Cu 0.06 ″ thick single sided), t ≤ 10 seconds.
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted) (No te 8)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
(V GS = 0 Vdc, I D = ? 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = ? 30 Vdc, V GS = 0 Vdc, T J = 25 ° C)
(V DS = ? 30 Vdc, V GS = 0 Vdc, T J = 125 ° C)
Gate ? Body Leakage Current
(V GS = ? 20 Vdc, V DS = 0 Vdc)
Gate ? Body Leakage Current
(V GS = +20 Vdc, V DS = 0 Vdc)
V (BR)DSS
I DSS
I GSS
I GSS
? 30
?
?
?
?
?
?
? 30
?
?
?
?
?
?
? 1.0
? 25
? 100
100
Vdc
mV/ ° C
m Adc
nAdc
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V DS = V GS , I D = ? 250 m Adc)
Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? State Resistance
(V GS = ? 10 Vdc, I D = ? 3.05 Adc)
(V GS = ? 4.5 Vdc, I D = ? 1.5 Adc)
Forward Transconductance
(V DS = ? 15 Vdc, I D = ? 3.05 Adc)
V GS(th)
R DS(on)
g FS
? 1.0
?
?
?
?
? 1.7
3.6
0.063
0.090
5.0
? 2.5
?
0.085
0.125
?
Vdc
W
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(V DS = ? 24 Vdc,
V GS = 0 Vdc,
f = 1.0 MHz)
C iss
C oss
C rss
?
?
?
520
170
70
750
325
135
pF
8. Handling precautions to protect against electrostatic discharge are mandatory.
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